Method and apparatus for improving sensitivity in vertical color CMOS image sensors

ABSTRACT

The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to solid-state image sensors andspecifically to a class of CMOS image sensors with multiple chargedetection nodes placed at various depths in the substrate to selectivelydetect light of different wavelengths. Sensors that use such pixels donot require wavelength selective filters to detect colors, and thus donot sacrifice Quantum Efficiency (QE) and resolution.

2. Description of the Related Art Including Information Disclosed Under37 CFR 1.97 and 1.98

A typical image sensor detects light by converting impinging photonsinto electrons that are integrated (collected) in pixels of the imagesensing area. After completing integration, collected charge isconverted into a voltage using a suitable charge-to-voltage conversionstructure. The sensed voltage is then supplied through variousaddressing circuitry and buffering amplifiers to the output terminals ofthe sensor. Placing various wavelength selective filters on top of thepixels allows only a chosen portion of the light spectrum to enter thepixel and generate charge. The description of the conventional conceptof color sensing may be found for example in U.S. Pat. No. 4,845,548 toKohno. However, this concept reduces detected light levels as well asarray resolution, since a single pixel can sense only one color whilerejecting other colors. Recently a new class of devices has beendeveloped, called VERTICOLOR Image Sensors, as described for example inU.S. patent 2002/0058353A1 to Merrill. These devices use a pixelstructure with multiple vertically stacked charge detection nodes thatdetect color by measuring charge generated at different depths withinthe pixel. Since light of different wavelengths penetrates to differentdepths in the substrate, color is sensed directly within one pixelwithout the necessity of surface wavelength selective filters. This isone advantage of the VERTICOLOR concept and technology. One problem withplacing multiple charge detection nodes vertically within a pixel is thelarge capacitance associated with each charge detection node thatreduces the node conversion gain and thus the sensor sensitivity.

FIG. 1 illustrates a simplified cross section of pixel 100, which isfrom a prior art CMOS image sensor. On p+ type doped silicon substrate101 there is p type doped region 102, which may be epitaxially grown,that extends all the way to the surface. P type doped region 102contains vertically stacked n type doped layers 103, 104 and 105. Theselayers can be formed, for example, by ion implantation betweenconsecutive epitaxial growth steps, or by other means. Varioustechniques are well known to those skilled in the art of modern silicondevice fabrication processing technology and the descriptions here inare not meant to be limiting.

Similarly, n+ type doped vertical extensions (plugs) 106, 107, and 108may be formed by ion implantation between epitaxial growth steps andserve as conductive connections that enable biasing and collection ofphoto-generated electrons in doped layers 103, 104 and 105 from thesurface of the silicon substrate.

Plugs 106, 107 and 108 are contacted by metal regions 111, 112, and 113,which can be formed through holes in silicon-dioxide dielectric layer110 or as multilevel interconnects over many types of dielectric layers,as is also well know in the art. Metal regions 111, 112, and 113 can beformed by a single metal, such as aluminum, or composed of complexmetallization systems formed by various layers of titanium-nitride,titanium, tungsten, aluminum, cooper, and so on. Metal regions 111, 112,and 113 are then interconnected with various circuit components by metalwiring 114 that is, for simplicity, shown in the drawing onlyschematically.

To prevent parasitic surface channel conduction and shorting together ofplugs 106, 107 and 108, p+ type doped isolation regions (channel stops)109 are inserted between each of plugs 106, 107 and 108. Typically,channel stops 109 completely surround each of corresponding plugs 106,107 and 108 in the direction that is perpendicular to the plane ofdrawing, which is not visible in FIG. 1.

One example of a typical circuit that can be used for detecting chargein the particular n+ type diffusion node is shown as a schematic inFIG. 1. The circuit consists of reset transistor 117 that connectscharge detection node 115 to reference voltage terminal 119 when asuitable reset level is applied to gate 118. Photo-generated chargeaccumulating on node 115 causes a voltage charge that is buffered bytransistor 116 with its drain connected to Vdd bias terminal 120. Theoutput signal then appears on node 121 and can be further processedeither as a voltage or as a current when supplied to the rest of thesensor circuitry. Circuit ground 122 is identical to p+ type dopedsubstrate 101. For simplicity, only one schematic circuit is shown,although there are typically three for a single pixel sensing threecolors. It would be apparent to those skilled in the art that other,more complex circuits can be connected to pixel 100.

When a reset voltage is applied to node 115 and the corresponding tworemaining nodes (circuits connected to plugs 106 and 107, not shown),the potential of these nodes is raised to the reference bias level Vrf.When the doping level of layer 103 (as well as layers 104 and 105) issufficiently high, the potential at node 115, the potential of plug 108(as well as plugs 107 and 106), and the potential of layer 103 (as wellas layers 104 and 105) are approximately the same. Layer 103 and plug108, which are buried reverse biased diodes, act as a single electrodeof a junction capacitor. The capacitance of such a structure is higherrelative to the desired capacitance of pixel 100, since the junctionarea surrounding layer 103 on all sides is large. Combined with theinput gate capacitance of the circuit connected to the node 115, thecharge conversion factor of the node is small. As a result, the pixelhas low sensitivity, which is undesirable in a sensor. What is needed isa vertically structured pixel with reduced capacitance.

BRIEF SUMMARY OF THE INVENTION

The invention provides a vertical multi-detection node structure thatsenses charge according to its depth of generation and has low chargedetection node capacitance.

Incorporating a fully depleted vertical stack of potential wells thatare connected to small charge detection nodes by suitable chargecarrying channels accomplishes this task and other objects of theinvention.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a prior art diagram illustrating a simplified pixel that hasthree n type diode charge detection nodes placed above each other withinthe p type substrate.

FIG. 2 is a diagram illustrating one embodiment of the invention thathas three fully depleted n− type layers of various doping concentrationplaced above each other within the p type substrate to form a singlepixel.

FIG. 3 is a graph illustrating a charge potential profile within thepixel of FIG. 2 taken along line A′-A. The graph shows the potential ofregions that have different doping concentrations. The collection andflow of photo-generated electrons is also shown in this drawing.

FIG. 4 is a diagram illustrating another embodiment of the inventionthat has three fully depleted n− type doped layers placed above eachother within the p type substrate to form a single pixel.

FIG. 5 is a diagram illustrating a basic pixel collector structure for asingle photodiode that accomplishes a doping grading without havingnon-standard implant levels and directions.

FIG. 6 is a graph illustrating dopant concentration levels relative todopant position within the buried portion of a photodiode of FIG. 5.

FIG. 7 is a diagram of another embodiment of the invention illustratingplug placement with respect to collector.

FIG. 8 is a graph of collector and plug potential for the plug andcollector of FIG. 7.

FIG. 9 is a flow diagram illustrating a method of collecting chargewithin a light-sensing pixel having a p type doped region in a CMOSimage sensor.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 2 is a diagram illustrating one embodiment of the invention thathas three fully depleted n− type layers of various doping concentrationplaced above each other within the p type substrate to form a singlepixel. Pixel 200 has p+ type substrate 201. P type doped region 202 was,for example, epitaxially deposited on substrate 201. Region 202 containsvertically stacked n type doped regions 203, 204 and 205 correspondingto regions 103, 104, and 105 in FIG. 1. However, these regions now areonly lightly doped such that they are depleted during normal operationof the pixel.

Extensions 223 and 224 are horizontal extensions of regions 203 and 204,respectively that have a slightly higher doping. The main reason foradding these extensions is to ensure a connection from the depletableregions 203 and 204 to plugs 208 and 207. The doping levels ofextensions 223 and 224 are such that they do not deplete out duringnormal operation of the pixel.

In contrast to region 105 in FIG. 1, p+ type doped surface region 225forms region 205 that is surrounded by p type material much like regions203 and 204. This causes region 205 to have similar operatingcharacteristics to regions 203 & 204. Another advantage gained by region225 is quenching of surface generated dark current by p+ type doping atthe silicon-silicon dioxide interface. This portion of the structure issimilar to pinned photodiode U.S. Pat. No. 4,484,210 to Teranisihi orVirtual Phase CCD gate electrode U.S. Pat. No. 4,229,752 to Hynecek,both incorporated by reference herein.

When driven to sufficiently high voltage, regions 203, 204, and 205 donot form conductive electrodes of a detection node capacitor, rather,they form depleted potential wells. When charge is generated in region202 at various depths it diffuses first vertically to one of regions203, 204, and 205, and then laterally within these regions tocorresponding plugs 208, 207, and 206.

When node 215 is reset to a sufficiently high voltage, only thepotential of node 215 and corresponding plug 208 changes. The potentialof region 203 and extension 224 remains relatively constant and does notchange significantly during reset of the pixel. Capacitance of node 215,therefore, consists of the capacitance of plug 208 and the inputcapacitance of the circuit at node 215. These capacitances can beminimized by appropriate sizing of transistors and structures and inaddition do not depend on the size of the regions 203, 204, and 205, andextensions 223 and 224 and thus do not depend on the size of the pixel.Reduced capacitance contributes to higher pixel sensitivity and lowernoise. In addition, the depletion of the photo charge collecting regions203, 204 and 205 enables a partial charge transfer action as is shown inthe prior art.

The remainder of pixel 200 operates in a manner similar to pixel 100.Oxide dielectric layer 210, channel stops 209, metal contacts 211, 212,and 213, together with wiring 214 serve the same purpose in pixel 200 asin pixel 100. Also, pixel 200 is the same with reset and buffertransistors 217 and 216 respectively, reset gate terminal 218, referencevoltage terminal 219, Vdd bias terminal 220, and output terminal 221.The circuit ground is terminal 222.

The metal interconnects and various circuit elements that also belong topixel 200 are for simplicity shown only schematically and some elementsare completely omitted. For example, only the schematic componentsconnected to plug 208 are illustrated, for simplicity.

FIG. 3 is a graph illustrating a charge potential profile within thepixel of FIG. 2 taken along line A′-A. In FIG. 3, the x-axis representsa position along line A′-A from FIG. 2 and the y-axis represents theelectron potential (direction down is positive potential representinglower electron energy). Section 309 represents potential level 301 ofthe substrate that can for convenience be set equal to zero. Section 306represents the potential of region 204 in FIG. 2 at a potential of 302.Section 307 represents the potential of extension 224 and plug 207 at apotential of 303. As charge 310 is generated in the pixel, it is firstcollected in the well at potential level 302 and drifts through levels303 and 304 to level 305 into detection node section 308. Detection nodesection 308 was previously reset to level 305.

As more charge accumulates at node 308, its potential is lowered tolevel 304; these levels are sensed by transistor 216. In one embodiment,region 204 is doped in such a manner so that all or substantially all ofthe charge will collect at node 308. This is accomplished by having thevoltage level 302 “pinned” at a particular voltage by depleting out andhaving it's capacitance go to zero. Charge will then drift towards thehigher potential of region 224 and then plug 207. Consequently, a pixelusing the invention has higher sensitivity.

In another embodiment, the charge potential profile is designed suchthat when more charge accumulates, at a certain level, for example,level 303 in graph 300, charge is stored in region 307 and eventuallyalso in region 306. In this case regions 224 and 204 begin in a fullydepleted state. As they collect charge they come out of depletion anddevelop capacitance. The increased capacitance in regions 224 and 204decreases the electron to voltage conversion (because of increase incapacitance). This changes the sensitivity of the pixel to chargecollection and thereby extends the dynamic range of the pixel.

FIG. 4 is a diagram illustrating another embodiment of the inventionthat has three fully depleted n− type doped layers placed above eachother within the p type substrate to from a single pixel. In pixel 400,vertical plugs 207 and 208 from pixel 200 in FIG. 2 have been eliminatedand replaced by vertical trench transistors. This reduces the detectionnode capacitance even further, since after the vertical transistors areturned off, only n+ type junction regions 406, 407, and 408 remainconnected to the circuit, which in the right process will have lowercapacitance than the plugs 207 and 208.

P+ type substrate 401 has p type doped region 402 epitaxially depositedon it. Region 402 contains vertically stacked n− type doped regions 403,404, and 405 that are under normal operating conditions completelydepleted of charge. Regions 403 and 404 extend laterally to trench holes433 and 432. It is also possible to include similar lateral extension as223 and 224 in FIG. 2 in this structure, but this has been omitted fromthe drawing for simplicity. Trench holes 432 and 433 have gate oxidegrown on their walls and bottom. The oxide layer can have a similarthickness as oxide layer 410 or have a different thickness.

It is also possible to place doping impurities 430 and 431 on selectedwalls of trench holes 432 and 433, respectively, by angled ionimplantation process. This will reduce the size of the channel thattransfers charge from potential wells 403 and 404 to surface n+ typedoped junctions 407 and 408 even further. A layer of poly-silicon formsgates 424 and 425 of vertical trench transistors. The gates areconnected to terminals 427 and 428. When a suitable voltage is appliedto these gates, photo-generated charge, which has accumulated inpotential wells formed in regions 403 and 404, is transferred tojunctions 407 and 408 for sensing. Because it is difficult to preciselyalign the depth of the trenches with the edges of doping regions 403 and404, a small overlap will typically be used. The trench transistors arecomprised of trench hole 433 and gate 425, and trench hole 432 and gate424.

The remainder of the structure is similar to the previous example. P+type doped channel stop regions 409 separate n+ type charge detectionnode junctions 406, 407, and 408 from each other. Detection nodejunctions 406, 407, and 408 are connected to metallization regions 411,412, and 413 through contact holes opened in oxide dielectric layer 410.Wires 414 are used for interconnecting detection node junctions 406, 407and 408 with the rest of the circuit components of pixel 400, such asreset transistor 417 and buffer transistor 416, for detection nodejunction 407.

Applying a voltage to gate terminal 418 activates reset transistor 417,which electrically connects node 415 to reference terminal 419. Anappropriate bias voltage, for example Vdd, is applied to terminal 420and the output signal appears on node 421. Circuit ground 422 isconnected to p+ type doped substrate 401. For the symmetry of thestructure the pinned photodiode formed by regions 429 and 405 isconnected to detection node 406 by a transistor. This transistor is,however, in a standard lateral buried channel configuration with gate423 and gate terminal 426.

The metal interconnects and various circuit elements that also belong tothe pixel are for simplicity shown only schematically and some arecompletely omitted.

FIG. 5 is a plan view illustrating another embodiment of a photodiode.Region 502 is a buried vertically stacked n type doped region, similarto regions 203, 204 and 205 of FIG. 2. Typically, excepting areas nearan edge, doping concentration at a given depth is uniform. Thereforethere is no field to drive collected charge to a contact, for exampleplug 208.

In order to achieve a lateral field to deliver collected charge to acontact, region 502 has vertically cut slits 503 with a width W. If thevertical thickness (in a plane perpendicular to the plane of FIG. 5) isgreater than width W, then dopants will diffuse into the gaps and createa lateral gradient in doping concentration, with doping levelsincreasing (from left to right) along the length of region 502. Dopantconcentration level is illustrated in FIG. 6.

Although FIG. 5 illustrates triangular slits, one of ordinary skill inthe art will recognize that the slits may be manufactured in a narrowingstep-wise fashion (not shown) or any other appropriate manner.

FIG. 6 is a graph illustrating dopant concentration levels relative toregion position within the buried portion of a photodiode of FIG. 5. TheP regions of graph 600 represent substrate 202. Graph 600 shows dopantconcentration on the X-axis and position on the Y-axis relative toposition, from left to right, of region 502 in FIG. 5. Line 610represents doping concentration along line 1′-1 of FIG. 5. Dopingconcentration increases somewhat, from left to right. Line 620represents doping concentration along line 2′-2 of FIG. 5, where dopingconcentration increases more than line 2′-2, from left to right. Atposition 630 the doping concentrations are the same at line 5′-5 in FIG.5, where slits 503 end. Dopant concentration along line 2′-2 willproduce the lateral field to drive charge to the right, according to theexample in FIG. 5. The number of slots 503 to include is limited only bythe technology available to produce them.

FIG. 7 is another embodiment of the invention illustrating plugplacement with respect to collector. Red collector 700 is overlapped bygreen collector 710. The blue collector is not shown in FIG. 7 forsimplicity. In one embodiment, plug 720 for red collector 700 ispositioned in the center of the red collector, rather than to the sideas illustrated in FIG. 2. Positioning of plug 720 at the center of redcollector 700 allows collection at maximum potential, eliminating aseparate layer to extend from the collector to the plug, for exampleextension 224 of FIG. 2.

FIG. 8 is a graph of an approximation of collector and plug potentialfor the plug and collector of FIG. 7. The Y-axis of graph 800 representsnegative potential in the increasing Y direction. The X-axis of graph800 represents position along red collector 700 of FIG. 7, with position810 representing plug 720 and the low and high points on the X-axisrepresenting the edges of red collector 700. Charge gathered by redcollector 700 settles to the point of highest positive potential, whichis at the lowest point on the Y-axis, in plug 720. Charge gathered atthe edges of red collector 700 diffuses towards the lowest point, inplug 720, represented by position 810 in graph 800. Potential level 820is an example of charge potential after integration.

FIG. 9 is a flow diagram illustrating a method of collecting chargewithin a light-sensing pixel having a p type doped region in a CMOSimage sensor. In block 900, expose the pixel to light. In block 910,collect a first charge within a first fully depleted region buriedwithin the p type region. In block 920, collect a second charge within asecond fully depleted region buried within the p type region, whereinthe second fully depleted region is vertically separated from the firstfully depleted region. In block 930, accumulate the first charge withina first plug extending from the near the surface of the image sensor tothe first fully depleted region. In block 940, accumulate the secondcharge within a second plug extending from the near the surface of theimage sensor to the second fully depleted region. In block 950, read outthe first charge as a first output signal from a first circuit coupledto the first plug. In block 960, read out the second charge as a secondoutput signal from a second circuit coupled to the second plug.

Having described the invention, it is noted that persons skilled in theart can make modifications and variations in light of the aboveteachings. It is therefore to be understood that changes may be made inthe particular embodiments of the inventions disclosed, which are withinthe scope and spirit of the inventions as defined by appended claims.

1. A light-sensing pixel, having a p type doped region, in a CMOS imagesensor, comprising: a first doped charge collecting region buried withinthe p type doped region and configured to operate as a depletedpotential well; a first n+ type doped plug extending from near thesurface of the image sensor to the first charge collecting region; asecond doped charge collecting region buried within the p type dopedregion, the second charge collecting region vertically separated fromthe first charge collecting region by the p type doped region andconfigured to operate as a depleted potential well; and a second n+ typedoped plug extending from near the surface of the image sensor to thesecond charge collecting region.
 2. The pixel of claim 1, the first andsecond charge collecting regions further comprising: a first extensionwith n+ type doping coupled to and between the first charge collectingregion and the first plug, and having a different doping concentrationthan the first charge collecting region; and a second extension with n+type doping coupled to and between the second charge collecting regionand the second plug, and having a different doping concentration thanthe second charge collecting region.
 3. The pixel of claim 2 wherein thefirst and second extensions are configured to operate not fully depletedof mobile charge.
 4. The pixel of claim 1 wherein the first n+ typedoped plug contacts the first charge collecting region in its center. 5.A light-sensing pixel, having a p type doped region, in a CMOS imagesensor, comprising: a first doped charge collecting region buried withinthe p type doped region and configured to operate as a depletedpotential well; a first vertical trench transistor extending from nearthe surface of the image sensor to the first charge collecting region; afirst n+ type doped region located at the surface of the image sensorand coupled to the first vertical trench transistor; a second dopedcharge collecting region buried within the p type doped region, thesecond charge collecting region vertically separated from the firstcharge collecting region by the p type doped region and configured tooperate as a depleted potential well; a second vertical trenchtransistor extending from near the surface of the image sensor to thesecond charge collecting region; and a second n+ type doped regionlocated at the surface of the image sensor and coupled to the secondvertical trench transistor.
 6. The pixel of claim 5, the first andsecond charge collecting regions further comprising: a first extensionwith n+ type doping coupled to and between the first charge collectingregion and the first vertical trench transistor, and having a differentdoping concentration than the first charge collecting region; and asecond extension with n+ type doping coupled to and between the secondcharge collecting region and the second vertical trench transistor, andhaving a different doping concentration than the second chargecollecting region.
 7. The pixel of claim 6 wherein the first and secondextensions are configured to operate not fully depleted of mobilecharge.
 8. The pixel of claim 5 wherein the first vertical trenchtransistor contacts the first charge collecting region in its center. 9.A light-sensing pixel, having a p type doped region, in a CMOS imagesensor, comprising: a first n+ type doped plug extending from near thesurface of the image sensor into the p type doped region; a first chargecollecting region configured to operate as a depleted potential well andburied within the p type doped region, having a first end and a secondend and coupled to the first plug at the first end, and having a firstvertical slit with a width at the second end, the first vertical slitnarrowing towards the first end; a second n+ type doped plug extendingfrom near the surface of the image sensor into the p type doped region;and a second charge collecting region configured to operate as adepleted potential well and buried within the p type doped region,having a first end and a second end and coupled to the first plug at thefirst end, the second charge collecting region vertically separated fromthe first charge collecting region by the p type doped region, andhaving a second vertical slit with a width at the second end, thevertical slit narrowing towards the first end.
 10. The pixel of claim 9,wherein the first charge collecting region has a vertical height that isgreater than the width of the first vertical slit, and the second chargecollecting region has a vertical height that is greater than the widthof the second vertical slit.
 11. The pixel of claim 9, the first andsecond charge collecting regions further comprising: a first extensionwith n+ type doping coupled to and between the first charge collectingregion and the first plug, and having a different doping concentrationthan the first charge collecting region; and a second extension with n+type doping coupled to and between the second charge collecting regionand the second plug, and having a different doping concentration thanthe second charge collecting region.
 12. The pixel of claim 11 whereinthe first extension is coupled to the first end of the first chargecollecting region and the second extension is coupled to the first endof the second charge collecting region.
 13. The pixel of claim 11wherein the first and second extensions are configured to operate notfully depleted of mobile charge.
 14. The pixel of claim 9 wherein thefirst n+ type doped plug contacts the first charge collecting region inits center.
 15. A light-sensing pixel, having a p type doped region, ina CMOS image sensor, comprising: a first vertical trench transistorextending from near the surface of the image sensor into the p typedoped region; a first doped charge collecting region buried within the ptype doped region and configured to operate as a depleted potentialwell, having a first end and a second end and coupled to the firstvertical trench transistor at the first end, and having a first verticalslit with a width at the second end, the first vertical slit narrowingtowards the first end; a first n+ type doped region located at thesurface of the image sensor and coupled to the first vertical trenchtransistor; a second vertical trench transistor extending from near thesurface of the image sensor into the p type doped region; a second dopedcharge collecting region buried within the p type doped region, thesecond charge collecting region vertically separated from the firstcharge collecting region by the p type doped region and configured tooperate as a depleted potential well, having a first end and a secondend and coupled to the second vertical trench transistor at the firstend, and having a first vertical slit with a width at the second end,the first vertical slit narrowing towards the first end; and a second n+type doped region located at the surface of the image sensor and coupledto the second vertical trench transistor.
 16. The pixel of claim 15, thefirst and second charge collecting regions further comprising: a firstextension with n+ type doping coupled to and between the first chargecollecting region and the first vertical trench transistor, and having adifferent doping concentration than the first charge collecting region;and a second extension with n+ type doping coupled to and between thesecond charge collecting region and the second vertical trenchtransistor, and having a different doping concentration than the secondcharge collecting region.
 17. The pixel of claim 16 wherein the firstand second extensions are configured to operate not fully depleted ofmobile charge.
 18. The pixel of claim 16 wherein the first extension iscoupled to the first end of the first charge collecting region and thesecond extension is coupled to the first end of the second chargecollecting region.
 19. The pixel of claim 15 wherein the first verticaltrench transistor contacts the first charge collecting region in itscenter.
 20. (canceled)
 21. (canceled)